Infineon HEXFET N-Channel MOSFET, 13 A, 30 V, 8-Pin SOIC IRF7413PBF

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Packaging Options:
RS Stock No.:
543-2468
Mfr. Part No.:
IRF7413PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

52 nC @ 10 V

Width

4mm

Length

5mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

1.5mm

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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