Name: Infineon HEXFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC IRF7452PBF
Brand: Infineon
SKU: 543-1320
Price: 85.77 PHP
Availability: Discontinued

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	4.5 A
	Maximum Drain Source Voltage	100 V
	Series	HEXFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Width	4mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	33 nC @ 10 V
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	1.5mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 4.5 A
	Maximum Drain Source Voltage 100 V
	Series HEXFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Length 5mm
	Maximum Operating Temperature +150 °C
	Width 4mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 33 nC @ 10 V
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 1.5mm

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

The Infineon IRF7452 is the 100V single N-channel HEXFET power MOSFET in a SO-8 package.

Fully characterized avalanche voltage and current
Low gate to drain charge to reduce switching losses

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon HEXFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC IRF7452PBF

N-Channel Power MOSFET 100V, Infineon

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