Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN IRLHS6276TRPBF
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP266.00
(exc. VAT)
PHP297.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,570 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP26.60 | PHP266.00 |
| 50 - 90 | PHP25.803 | PHP258.03 |
| 100 - 490 | PHP24.256 | PHP242.56 |
| 500 - 1990 | PHP22.072 | PHP220.72 |
| 2000 + | PHP19.423 | PHP194.23 |
*price indicative
- RS Stock No.:
- 257-5826
- Mfr. Part No.:
- IRLHS6276TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 9.6W | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 9.6W | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 2 mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface-mount power package
Low RDS(on) in a small package
Related links
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- Infineon HEXFET Type N-Channel MOSFET 20 V PQFN
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