Infineon HEXFET Type N-Channel MOSFET, 49 A, 20 V PQFN

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Subtotal (1 reel of 4000 units)*

PHP320,204.00

(exc. VAT)

PHP358,628.00

(inc. VAT)

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Units
Per Unit
Per Reel*
4000 +PHP80.051PHP320,204.00

*price indicative

RS Stock No.:
257-9376
Mfr. Part No.:
IRFH6200TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

49A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

15mΩ

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

155nC

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFH series is the 20V single n channel strong IRFET power mosfet in a PQFN 5x6 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Industry standard surface mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below 100 kHz

Softer body diode compared to previous silicon generation

Wide portfolio available

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