Infineon HEXFET Type N-Channel MOSFET, 3.4 A, 20 V PQFN

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Subtotal (1 reel of 4000 units)*

PHP64,772.00

(exc. VAT)

PHP72,544.00

(inc. VAT)

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Units
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Per Reel*
4000 +PHP16.193PHP64,772.00

*price indicative

RS Stock No.:
257-5572
Mfr. Part No.:
IRLHS6276TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.4A

Maximum Drain Source Voltage Vds

20V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

65mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±12 V

Maximum Power Dissipation Pd

9.6W

Typical Gate Charge Qg @ Vgs

3.1nC

Maximum Operating Temperature

150°C

Width

2 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface-mount power package

Low RDS(on) in a small package

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