Infineon HEXFET Type N-Channel MOSFET, 362 A, 40 V, 7-Pin TO-263 IRFS7434TRL7PP
- RS Stock No.:
- 257-5815
- Mfr. Part No.:
- IRFS7434TRL7PP
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP372.48
(exc. VAT)
PHP417.18
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP186.24 | PHP372.48 |
| 10 - 48 | PHP167.155 | PHP334.31 |
| 50 - 98 | PHP163.825 | PHP327.65 |
| 100 - 248 | PHP136.985 | PHP273.97 |
| 250 + | PHP134.22 | PHP268.44 |
*price indicative
- RS Stock No.:
- 257-5815
- Mfr. Part No.:
- IRFS7434TRL7PP
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 362A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 210nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 245W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 362A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 210nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 245W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability Lead-Free, RoHS Compliant
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