Infineon HEXFET Type N-Channel MOSFET, 295 A, 40 V, 7-Pin TO-263 IRFS7437TRL7PP
- RS Stock No.:
- 257-5829
- Distrelec Article No.:
- 304-40-544
- Mfr. Part No.:
- IRFS7437TRL7PP
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP327.71
(exc. VAT)
PHP367.036
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 784 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP163.855 | PHP327.71 |
| 10 - 48 | PHP147.31 | PHP294.62 |
| 50 - 98 | PHP144.445 | PHP288.89 |
| 100 - 248 | PHP120.895 | PHP241.79 |
| 250 + | PHP118.345 | PHP236.69 |
*price indicative
- RS Stock No.:
- 257-5829
- Distrelec Article No.:
- 304-40-544
- Mfr. Part No.:
- IRFS7437TRL7PP
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 295A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 231W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.54mm | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 295A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 231W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.54mm | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount power package
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V, 7-Pin TO-263 IRFS7434TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET 100 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 75 V, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V, 7-Pin TO-263
