Vishay SI3483DDV Type P-Channel MOSFET, -6.4 A, -30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- RS Stock No.:
- 256-7358
- Mfr. Part No.:
- SI3483DDV-T1-GE3
- Manufacturer:
- Vishay
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PHP48,756.00
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PHP54,606.00
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP16.252 | PHP48,756.00 |
| 6000 - 6000 | PHP15.206 | PHP45,618.00 |
| 9000 + | PHP14.731 | PHP44,193.00 |
*price indicative
- RS Stock No.:
- 256-7358
- Mfr. Part No.:
- SI3483DDV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6.4A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | TSOP-6 | |
| Series | SI3483DDV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.0513Ω | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 4.5nC | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6.4A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type TSOP-6 | ||
Series SI3483DDV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.0513Ω | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 4.5nC | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
Vishay SI3483DDV Series MOSFET, 3W Maximum Power Dissipation, -30V Maximum Drain Source Voltage - SI3483DDV-T1-GE3
This p-channel MOSFET is a surface-mount switching transistor designed for electronic power control in compact assemblies. It operates across a broad temperature span and is suitable for low-voltage applications requiring moderate current handling and efficient conduction. The device comes in a TSOP-6 package and is specified for standard RoHS manufacturing environments.
Features and Benefits:
• Low Rds(on) 0.0513Ω enables reduced conduction losses
• Maximum continuous drain current -6.4A supports moderate load currents
• Drain-source voltage rating -30V permits low-voltage switching
• Gate threshold allowing Vgs up to 16V provides flexible drive range
• Typical gate charge 4.5nC yields faster switching for efficiency
• Power dissipation 3W limits thermal load for compact designs
• Maximum continuous drain current -6.4A supports moderate load currents
• Drain-source voltage rating -30V permits low-voltage switching
• Gate threshold allowing Vgs up to 16V provides flexible drive range
• Typical gate charge 4.5nC yields faster switching for efficiency
• Power dissipation 3W limits thermal load for compact designs
Applications
• Used for reverse-battery protection in portable electronics
• Suitable for load switching in power-distribution rails
• Ideal for high-side switching in battery-management systems
• Can be used for USB power-path selection circuits
• Used with motor-driver gates in low-voltage systems
• Suitable for load switching in power-distribution rails
• Ideal for high-side switching in battery-management systems
• Can be used for USB power-path selection circuits
• Used with motor-driver gates in low-voltage systems
What thermal extremes can the device tolerate in operation?
It is rated to operate from -55°C up to +150°C, allowing use across harsh ambient and elevated-temperature board conditions.
How many pins and what mounting style does it use?
The package has six pins and is intended for surface mounting on populated boards.
What channel type and conduction polarity should be expected?
The transistor is a p-channel device, so source and drain roles align with P-type switching configurations.
Is this suited to automotive standard requirements?
It is not designated as an automotive-standard component and should not be assumed to meet specific automotive qualification criteria.
Related links
- Vishay Type P-Channel MOSFET 30 V, 6-Pin TSOP-6 SI3483DDV-T1-GE3
- Vishay Type P-Channel MOSFET 40 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 150 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6
- Vishay Type P-Channel MOSFET 20 V, 6-Pin TSOP-6
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