Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

RS Stock No.:: 180-7895
Mfr. Part No.:: SI3421DV-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 8 A, 30 V Enhancement, 6-Pin TSOP SI3421DV-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP515.48

(exc. VAT)

PHP577.34

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 3,460 unit(s), ready to ship from another location

Units	Per Unit	Per Pack*
20 - 20	PHP25.774	PHP515.48
40 - 80	PHP23.197	PHP463.94
100 - 480	PHP20.877	PHP417.54
500 - 980	PHP18.79	PHP375.80
1000 +	PHP16.911	PHP338.22

*price indicative

RS Stock No.:: 180-7895
Mfr. Part No.:: SI3421DV-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSOP
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	19.2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.7W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Length	3.1mm
	Width	2.98 mm
	Standards/Approvals	No
	Height	1.1mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSOP
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 19.2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.7W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Length 3.1mm
	Width 2.98 mm
	Standards/Approvals No
	Height 1.1mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 19.2mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 4.2W and continuous drain current of 8A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Adaptor switch

• DC/DC converter

• For mobile computing/consumer

• Load switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested