Vishay SI3437DV Type P-Channel MOSFET, -1.4 A, -150 V, 6-Pin TSOP-6 SI3437DV-T1-GE3
- RS Stock No.:
- 256-7351
- Mfr. Part No.:
- SI3437DV-T1-GE3
- Manufacturer:
- Vishay
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PHP287.10
(exc. VAT)
PHP321.55
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP57.42 | PHP287.10 |
| 50 - 95 | PHP55.698 | PHP278.49 |
| 100 - 245 | PHP52.358 | PHP261.79 |
| 250 - 995 | PHP47.642 | PHP238.21 |
| 1000 + | PHP41.924 | PHP209.62 |
*price indicative
- RS Stock No.:
- 256-7351
- Mfr. Part No.:
- SI3437DV-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -1.4A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TSOP-6 | |
| Series | SI3437DV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.79Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Power Dissipation Pd | 3.2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -1.4A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TSOP-6 | ||
Series SI3437DV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.79Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Power Dissipation Pd 3.2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 1.1mm | ||
Automotive Standard No | ||
Vishay SI3437DV Series MOSFET, 3.2W Maximum Power Dissipation, 150V Maximum Drain Source Voltage - SI3437DV-T1-GE3
This p-channel MOSFET is a surface-mount transistor designed for high-voltage switching and control in compact electronic assemblies. It operates across a broad thermal span, making it suitable for environments with large temperature swings, and is intended for circuit designs that require a controlled gate charge and moderate continuous current handling in a low-profile package.
Features and Benefits:
• 150V drain capability enables high-voltage switching applications
• 0.79Ω on-resistance reduces conduction losses during operation
• 1.4A continuous drain current supports modest load currents
• 8nC typical gate charge allows predictable switching behaviour
• 3.2W power dissipation handles moderate thermal loading
• RoHS compliance meets environmental material restrictions
• 0.79Ω on-resistance reduces conduction losses during operation
• 1.4A continuous drain current supports modest load currents
• 8nC typical gate charge allows predictable switching behaviour
• 3.2W power dissipation handles moderate thermal loading
• RoHS compliance meets environmental material restrictions
Applications
• Suitable for high-voltage load switching in power supplies
• Ideal for battery protection and reverse-polarity circuits
• Used with compact converters requiring surface-mount components
• Can be used for signal-level switching in industrial controls
• Appropriate for consumer electronics with thermal variation demands
• Ideal for battery protection and reverse-polarity circuits
• Used with compact converters requiring surface-mount components
• Can be used for signal-level switching in industrial controls
• Appropriate for consumer electronics with thermal variation demands
What mounting considerations are there for compact boards?
It is supplied in a TSOP-6 surface-mount package, so pad layout should follow TSOP-6 footprint recommendations and allow adequate copper for heat spreading.
How does gate drive affect switching performance?
Gate drive magnitude and slew rate will influence switching losses because the device exhibits an 8nC typical gate charge
driver selection should match desired rise/fall times.
What thermal range can it tolerate during operation?
The device is specified to function from -55°C up to +150°C, which accommodates applications with substantial ambient and junction temperature variation.
Are there limitations for automotive integration?
The part is not designated to automotive standards, so it should not be chosen where certified automotive-grade components are required.
Related links
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