Vishay TrenchFET Gen IV Type N-Channel MOSFET, 245 A, 30 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ186E-T1_GE3

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Subtotal (1 pack of 2 units)*

PHP374.75

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PHP419.72

(inc. VAT)

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Per Pack*
2 - 48PHP187.375PHP374.75
50 - 98PHP168.64PHP337.28
100 - 248PHP151.775PHP303.55
250 - 998PHP136.60PHP273.20
1000 +PHP122.94PHP245.88

*price indicative

Packaging Options:
RS Stock No.:
252-0316
Mfr. Part No.:
SQJQ186E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

245A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET Gen IV

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

43nC

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

214W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

6.15mm

Height

1.9mm

Width

4.9 mm

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

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