Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP147.98

(exc. VAT)

PHP165.74

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 10,960 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
10 - 10PHP14.798PHP147.98
20 - 90PHP13.336PHP133.36
100 - 240PHP12.003PHP120.03
250 - 490PHP10.799PHP107.99
500 +PHP9.723PHP97.23

*price indicative

Packaging Options:
RS Stock No.:
250-0554
Mfr. Part No.:
BSS209PWH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-323

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.

VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A

Maximum power dissipation is 500mW

Related links