Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323
- RS Stock No.:
- 250-0541
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP9,801.00
(exc. VAT)
PHP10,977.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 12,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP3.267 | PHP9,801.00 |
| 6000 - 6000 | PHP2.94 | PHP8,820.00 |
| 9000 + | PHP2.646 | PHP7,938.00 |
*price indicative
- RS Stock No.:
- 250-0541
- Mfr. Part No.:
- BSS138WH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.28A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSS | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.28A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSS | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
100% lead-free
Maximum power dissipation is 360mW
Related links
- Infineon BSS Type N-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323
- Infineon BSS Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-323 BSS209PWH6327XTSA1
- Infineon BSS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-89
- Infineon BSS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23
- Infineon BSS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-89 BSS225H6327FTSA1
- Infineon BSS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS159NH6906XTSA1