Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

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Subtotal (1 reel of 3000 units)*

PHP10,989.00

(exc. VAT)

PHP12,309.00

(inc. VAT)

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Units
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Per Reel*
3000 - 3000PHP3.663PHP10,989.00
6000 - 6000PHP3.297PHP9,891.00
9000 +PHP2.967PHP8,901.00

*price indicative

RS Stock No.:
250-0553
Mfr. Part No.:
BSS209PWH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-323

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.

VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A

Maximum power dissipation is 500mW

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