Infineon iPB Type P-Channel MOSFET, 273 A, 100 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 249-6907
- Mfr. Part No.:
- IPB80P03P4L04ATMA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP88,077.00
(exc. VAT)
PHP98,646.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP88.077 | PHP88,077.00 |
| 2000 - 2000 | PHP85.435 | PHP85,435.00 |
| 3000 + | PHP82.872 | PHP82,872.00 |
*price indicative
- RS Stock No.:
- 249-6907
- Mfr. Part No.:
- IPB80P03P4L04ATMA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 273A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 273A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
Related links
- Infineon iPB Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB80P03P4L04ATMA2
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263
- Infineon iPB Type P-Channel MOSFET 100 V N, 3-Pin TO-263 IPB110P06LMATMA1
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB60R060C7ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 IPB120N10S405ATMA1
- Infineon iPB Type N-Channel MOSFET 100 V P, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 100 V P, 3-Pin TO-263 IPB020N08N5ATMA1