Infineon BSG0810NDI 2 Type N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8
- RS Stock No.:
- 242-0300
- Mfr. Part No.:
- BSG0810NDIATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP355,775.00
(exc. VAT)
PHP398,470.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP71.155 | PHP355,775.00 |
| 10000 - 10000 | PHP69.358 | PHP346,790.00 |
| 15000 + | PHP67.561 | PHP337,805.00 |
*price indicative
- RS Stock No.:
- 242-0300
- Mfr. Part No.:
- BSG0810NDIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | BSG0810NDI | |
| Package Type | TISON-8 | |
| Pin Count | 8 | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Power Dissipation Pd | 6.25W | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series BSG0810NDI | ||
Package Type TISON-8 | ||
Pin Count 8 | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Power Dissipation Pd 6.25W | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon Power Block is a dual asymmetric N-channel OptiMOS 5 MOSFET. It is monolithic integrated Schottky like diode.
Halogen-free according to IEC61249-2-21
Pb-free lead plating and RoHS compliant
Related links
- Infineon BSG0810NDI 2 Type N-Channel MOSFET 25 V, 8-Pin TISON-8 BSG0810NDIATMA1
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 25 V Enhancement, 8-Pin TISON-8
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 25 V Enhancement, 8-Pin TISON-8 BSC0910NDIATMA1
- Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET 25 V Enhancement, 8-Pin Power Block 5x6
- Infineon N Channel Mosfet OptiMOS 2 Type N-Channel MOSFET 25 V Enhancement, 8-Pin Power Block 5x6 BSG0811NDATMA1
- Infineon TLE4973A120T5S0001XUMA1 PG-TISON-8-6
- Infineon TLE4973R120T5US0010XUMA1 PG-TISON-8-6
- Infineon TLE4973R120T5S0010XUMA1 PG-TISON-8-6