Infineon ISK Type N-Channel MOSFET, 55 A, 25 V, 6-Pin PQFN
- RS Stock No.:
- 240-6376
- Mfr. Part No.:
- ISK024NE2LM5
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP87,645.00
(exc. VAT)
PHP98,163.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 12,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP29.215 | PHP87,645.00 |
| 6000 - 6000 | PHP28.783 | PHP86,349.00 |
| 9000 + | PHP28.064 | PHP84,192.00 |
*price indicative
- RS Stock No.:
- 240-6376
- Mfr. Part No.:
- ISK024NE2LM5
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | ISK | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Forward Voltage Vf | 0.81V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series ISK | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Forward Voltage Vf 0.81V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ 5 power MOSFET 25 V, 2.4 mΩ, smallest form factor in PQFN 2x2 package. With the new BIC OptiMOS™ 5 in 25V and 30V product family Infineon offers a best-in-class solution for efficiency in a small form factor, making it the perfect solution for applications such as wireless charging, load switches and low power DCDC applications. The small 4 mm2 footprint PQFN 2x2 package, combined with outstanding electrical performance contributes towards form factor improvement in end applications, featuring low RDSon of 2.4 mΩ.
Superior thermal resistance for a PQFN 2x2 package
Optimized for highest performance and power density
Industrys lowest RDSon in smallest PQFN 2x2 package
N-channel
100% Avalanche tested
Pb-free lead plating; RoHS compliant
Related links
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK024NE2LM5
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon ISK Type N-Channel MOSFET 25 V, 6-Pin PQFN ISK036N03LM5
- Infineon HEXFET Type N-Channel MOSFET -30 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET -30 V, 6-Pin PQFN IRFHS9351TRPBF
- Infineon HEXFET Type N-Channel MOSFET 25 V, 6-Pin PQFN IRFHS8242TRPBF
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 6-Pin PQFN
