Vishay Type N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3

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Subtotal (1 pack of 2 units)*

PHP476.67

(exc. VAT)

PHP533.87

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 48PHP238.335PHP476.67
50 - 98PHP231.19PHP462.38
100 - 248PHP217.315PHP434.63
250 - 998PHP197.76PHP395.52
1000 +PHP174.025PHP348.05

*price indicative

Packaging Options:
RS Stock No.:
239-8676
Mfr. Part No.:
SQJQ112E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00253Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

255W

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

125°C

Width

4.9 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Thin package

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