Vishay Type N-Channel MOSFET, 410 A, 30 V Depletion, 4-Pin PowerPAK SO-8L SQJ186EP-T1_GE3

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Subtotal (1 pack of 10 units)*

PHP494.95

(exc. VAT)

PHP554.34

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP49.495PHP494.95
50 - 90PHP48.543PHP485.43
100 - 240PHP47.589PHP475.89
250 - 990PHP46.637PHP466.37
1000 +PHP36.296PHP362.96

*price indicative

Packaging Options:
RS Stock No.:
239-8671
Mfr. Part No.:
SQJ186EP-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

410A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8L

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.02Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

255W

Typical Gate Charge Qg @ Vgs

43nC

Maximum Operating Temperature

125°C

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay SIDR is automotive N-Channel MOSFET which operates at 80 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

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