Vishay Type N-Channel MOSFET, 37 A, 60 V Depletion, 4-Pin PowerPAK (8x8L) SIJH600E-T1-GE3
- RS Stock No.:
- 239-8640
- Mfr. Part No.:
- SIJH600E-T1-GE3
- Manufacturer:
- Vishay
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Subtotal (1 unit)*
PHP364.95
(exc. VAT)
PHP408.74
(inc. VAT)
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Units | Per Unit |
|---|---|
| 1 - 49 | PHP364.95 |
| 50 - 99 | PHP354.01 |
| 100 - 249 | PHP332.77 |
| 250 - 999 | PHP302.82 |
| 1000 + | PHP266.48 |
*price indicative
- RS Stock No.:
- 239-8640
- Mfr. Part No.:
- SIJH600E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK (8x8L) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 141nC | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Operating Temperature | 125°C | |
| Length | 8mm | |
| Width | 7.9 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK (8x8L) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 141nC | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Operating Temperature 125°C | ||
Length 8mm | ||
Width 7.9 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V and 175 °C temperature. This MOSFET used for battery management, motor drive control and synchronous rectification.
Fully lead free device
Low switching and power loss
UIS tested
Smaller footprint
Related links
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