Vishay EF Type N-Channel MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247 SIHG026N60EF-GE3
- RS Stock No.:
- 239-8629
- Mfr. Part No.:
- SIHG026N60EF-GE3
- Manufacturer:
- Vishay
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PHP927.47
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Units | Per Unit |
|---|---|
| 1 - 4 | PHP828.10 |
| 5 - 9 | PHP803.25 |
| 10 - 24 | PHP771.12 |
| 25 - 99 | PHP732.56 |
| 100 + | PHP688.62 |
*price indicative
- RS Stock No.:
- 239-8629
- Mfr. Part No.:
- SIHG026N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.02Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 521W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.02Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 521W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay EF series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.
4th generation E series technology
Low effective capacitance
Low switching and conduction losses
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