Vishay EF Type N-Channel MOSFET, 7 A, 850 V Depletion, 3-Pin TO-220 SIHA21N80AEF-GE3

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Subtotal (1 pack of 2 units)*

PHP261.36

(exc. VAT)

PHP292.72

(inc. VAT)

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Being discontinued
  • Final 1,000 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
2 - 8PHP130.68PHP261.36
10 - 18PHP126.76PHP253.52
20 - 24PHP121.695PHP243.39
26 - 98PHP115.61PHP231.22
100 +PHP108.675PHP217.35

*price indicative

Packaging Options:
RS Stock No.:
239-8625
Mfr. Part No.:
SIHA21N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.22Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

33W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay E series is power MOSFET With fast body Diode. This MOSFET used for server and telecom power supply, welding, and motor drives.

Low figure-of-merit

Low effective capacitance

Low switching and conduction losses

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