Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Manufacturer:
- Vishay
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PHP369.006
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP164.735 | PHP329.47 |
| 10 - 18 | PHP161.79 | PHP323.58 |
| 20 - 24 | PHP158.52 | PHP317.04 |
| 26 - 98 | PHP155.25 | PHP310.50 |
| 100 + | PHP152.31 | PHP304.62 |
*price indicative
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.305Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 34W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.305Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 34W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6.5A Drain Current - SiHA17N80AEF-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding electrical and automotive contexts. It operates as an N-channel depletion device in a through-hole TO-220 surface package, providing a Compact solution for power conversion and control where robust voltage handling and thermal margin are required.
Features and Benefits:
• 850V maximum drain-source voltage for high-voltage applications • 6.5A continuous drain current enabling sustained load handling • 0.305 Ω Rds minimises conduction losses under load • 34W power dissipation supports elevated thermal budgets • 63 nC typical gate charge for predictable switching control • ±150 °C/-55 °C operating range offers wide temperature endurance
Applications
• Suitable for high-voltage DC-DC converter stages in industrial systems • Ideal for inverter front ends and power-factor circuits • Used for switch-mode power supplies in automation equipment • Can be used for automotive power electronics meeting AEC‑Q101 criteria • Used with gate drivers requiring defined charge characteristics
What gate-voltage limits should be observed during design?
The device tolerates gate excursion up to 30 V
designs should ensure gate‑drive circuits remain within this limit to prevent gate-oxide stress.
How should thermal management be implemented for reliable operation?
Given a 34W dissipation rating, attach an appropriate heatsink to the TO‑220 tab and ensure sufficient airflow to maintain junction temperatures within safe bounds.
What considerations apply to switching losses and driver selection?
With a typical gate charge of 63 nC, choose a driver capable of sourcing and sinking the required Peak currents to achieve the desired rise/fall times while managing switching losses.
Is the device suitable for automotive qualification processes?
It conforms to AEC‑Q101 standards for automotive MOSFETs, making it appropriate for designs that require automotive‑grade components.
What electrical polarity and channel behaviour should designers expect?
The transistor is an N‑channel depletion device, so circuit topology must account for its channel mode when implementing normally‑on or normally‑off switching arrangements.
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