Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Manufacturer:
- Vishay
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PHP329.47
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PHP369.006
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP164.735 | PHP329.47 |
| 10 - 18 | PHP161.79 | PHP323.58 |
| 20 - 24 | PHP158.52 | PHP317.04 |
| 26 - 98 | PHP155.25 | PHP310.50 |
| 100 + | PHP152.31 | PHP304.62 |
*price indicative
- RS Stock No.:
- 239-8622
- Mfr. Part No.:
- SiHA17N80AEF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.305Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 34W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.305Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 34W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 850V Maximum Drain Source Voltage, 6.5A Maximum Continuous Drain Current - SiHA17N80AEF-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in demanding electronic systems. It is supplied in a TO-220 package intended for surface mounting and supports extended operating temperatures, making it suitable for applications requiring wide thermal-range performance and automotive-grade robustness.
Features and Benefits:
• 850V drain-source rating enables high-voltage switching applications
• 6.5A continuous drain current supports moderate load currents
• 0.305Ω Rds(on) reduces conduction losses under load
• 63nC typical gate charge lowers switching energy demands
• 34W maximum power dissipation manages thermal stress in operation
• -55°C to +150°C operating range withstands extreme temperatures
• 6.5A continuous drain current supports moderate load currents
• 0.305Ω Rds(on) reduces conduction losses under load
• 63nC typical gate charge lowers switching energy demands
• 34W maximum power dissipation manages thermal stress in operation
• -55°C to +150°C operating range withstands extreme temperatures
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for automotive electronics meeting AEC‑Q101 requirements
• Used with industrial motor drives requiring robust switching
• Can be used for SMPS stages handling high-voltage rails
• Used for power switching in renewable-energy interfaces
• Ideal for automotive electronics meeting AEC‑Q101 requirements
• Used with industrial motor drives requiring robust switching
• Can be used for SMPS stages handling high-voltage rails
• Used for power switching in renewable-energy interfaces
What gate voltage limits must be observed for safe operation?
The device must not exceed a gate-source voltage of 30V to prevent gate-oxide stress.
How does the package influence thermal handling?
The TO-220 package allows effective heat-sinking and supports the stated 34W power dissipation when mounted appropriately.
What channel characteristics affect circuit topology choices?
Being an N-channel depletion-mode device, it conducts without gate drive and requires gate-biasing strategies to control off-state behaviour.
Is the device suitable for regulated automotive environments?
It conforms to AEC‑Q101 automotive standards and is specified for extended temperature limits to meet vehicle-system requirements.
Related links
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