Toshiba Type N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R,LF(T

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Subtotal (1 pack of 100 units)*

PHP598.50

(exc. VAT)

PHP670.30

(inc. VAT)

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  • 17,900 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
100 - 100PHP5.985PHP598.50
200 - 200PHP5.863PHP586.30
300 - 400PHP5.748PHP574.80
500 - 900PHP5.634PHP563.40
1000 +PHP5.389PHP538.90

*price indicative

Packaging Options:
RS Stock No.:
236-3578
Mfr. Part No.:
SSM3K339R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

220mΩ

Forward Voltage Vf

-0.85V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Height

0.8mm

Width

2.9 mm

Standards/Approvals

No

Length

2.4mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having N channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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