Toshiba Type N-Channel MOSFET, 2 A, 40 V Enhancement, 3-Pin SOT-23 SSM3K339R

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 50 units)*

PHP473.00

(exc. VAT)

PHP530.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,200 unit(s) ready to ship from another location
  • Plus 16,800 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
50 - 50PHP9.46PHP473.00
100 - 450PHP8.414PHP420.70
500 - 950PHP7.205PHP360.25
1000 +PHP6.146PHP307.30

*price indicative

Packaging Options:
RS Stock No.:
171-2471
Mfr. Part No.:
SSM3K339R
Manufacturer:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12 V

Typical Gate Charge Qg @ Vgs

1.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Width

1.8 mm

Height

0.7mm

Automotive Standard

No

COO (Country of Origin):
TH
Power Management Switches

DC-DC Converters

1.8-V gate drive voltage.

Low drain-source on-resistance

RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A)

RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A)

RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A)

RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)

Related links