Toshiba Type N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 SSM3K329R,LF(T

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Subtotal (1 reel of 3000 units)*

PHP30,918.00

(exc. VAT)

PHP34,629.00

(inc. VAT)

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3000 +PHP10.306PHP30,918.00

*price indicative

RS Stock No.:
236-3574
Mfr. Part No.:
SSM3K329R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

289mΩ

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-0.9V

Maximum Operating Temperature

150°C

Length

2.4mm

Standards/Approvals

No

Width

2.9 mm

Height

0.8mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having N channel MOS type. It is mainly used in power management switching and high speed switching applications.

Storage temperature range −55 to 150 °C

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