Toshiba Type P-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 SSM3J356R,LF(T

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Subtotal (1 pack of 50 units)*

PHP592.90

(exc. VAT)

PHP664.05

(inc. VAT)

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  • 150 unit(s) ready to ship from another location
  • Plus 2,750 unit(s) shipping from January 01, 2026
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Units
Per Unit
Per Pack*
50 - 50PHP11.858PHP592.90
100 - 200PHP10.54PHP527.00
250 - 450PHP10.338PHP516.90
500 - 950PHP10.135PHP506.75
1000 +PHP9.486PHP474.30

*price indicative

Packaging Options:
RS Stock No.:
236-3573
Mfr. Part No.:
SSM3J356R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Typical Gate Charge Qg @ Vgs

8.3nC

Maximum Power Dissipation Pd

2W

Maximum Gate Source Voltage Vgs

-20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

2.4mm

Height

0.8mm

Standards/Approvals

No

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor made up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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