Toshiba Type P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SSM3J338R,LF(T

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Subtotal (1 pack of 50 units)*

PHP6,605.55

(exc. VAT)

PHP7,398.20

(inc. VAT)

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  • Plus 200 unit(s) shipping from January 26, 2026
  • Plus 400 unit(s) shipping from February 02, 2026
  • Plus 12,000 unit(s) shipping from February 05, 2026
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Units
Per Unit
Per Pack*
50 - 50PHP132.111PHP6,605.55
100 - 200PHP128.812PHP6,440.60
250 - 450PHP125.593PHP6,279.65
500 - 950PHP122.453PHP6,122.65
1000 +PHP119.393PHP5,969.65

*price indicative

Packaging Options:
RS Stock No.:
236-3569
Mfr. Part No.:
SSM3J338R,LF(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

12V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

26.3mΩ

Typical Gate Charge Qg @ Vgs

19.5nC

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Forward Voltage Vf

0.75V

Maximum Operating Temperature

150°C

Height

0.8mm

Standards/Approvals

No

Length

2.4mm

Width

2.9 mm

Automotive Standard

No

The Toshiba field effect transistor MADE up of the silicon material and having P channel MOS type. It is mainly used in power management switching applications.

Storage temperature range −55 to 150 °C

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