Infineon IPT Type N-Channel MOSFET, 454 A, 60 V, 8-Pin HSOF-8 IPT008N06NM5LFATMA1

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Subtotal (1 unit)*

PHP401.02

(exc. VAT)

PHP449.14

(inc. VAT)

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Units
Per Unit
1 - 9PHP401.02
10 - 99PHP393.01
100 - 249PHP385.00
250 - 499PHP377.71
500 +PHP369.71

*price indicative

Packaging Options:
RS Stock No.:
236-1585
Mfr. Part No.:
IPT008N06NM5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

454A

Maximum Drain Source Voltage Vds

60V

Series

IPT

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.8mΩ

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

185nC

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

2.4mm

Width

10.58 mm

Standards/Approvals

No

Length

10.1mm

Automotive Standard

No

The Infineon OptiMOS 5 Linear FET, 60 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel, normal level

100% avalanche tested

Pb-free plating, halogen-free

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