Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8 IPT039N15N5ATMA1

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PHP379.85

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PHP425.43

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1 - 9PHP379.85
10 - 99PHP341.80
100 - 249PHP307.73
250 - 499PHP277.08
500 +PHP249.24

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Packaging Options:
RS Stock No.:
249-3349
Mfr. Part No.:
IPT039N15N5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

150V

Series

IPT

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.

Drain to Source Voltage (Vdss) is 150 V

Continuous drain current is (Id) @ 25°C is 21 A (Ta), 190 A (Tc)

Drive Voltages (Max Rds On, Min Rds On) are 8V & 10V

Operating temperature is from -55°C to 175°C (TJ)

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