Infineon IPT Type N-Channel MOSFET, 190 A, 150 V Enhancement, 8-Pin HSOF-8

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 2000 units)*

PHP481,314.00

(exc. VAT)

PHP539,072.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
2000 - 2000PHP240.657PHP481,314.00
4000 - 4000PHP216.591PHP433,182.00
6000 +PHP194.932PHP389,864.00

*price indicative

RS Stock No.:
249-3348
Mfr. Part No.:
IPT039N15N5ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

190A

Maximum Drain Source Voltage Vds

150V

Series

IPT

Package Type

HSOF-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon Optimos 5 power mosfet is N-Channel mosfet offers very low on-resistance and superior thermal resistance. This device is Pb (Lead) and halogen free. It comes in a surface mount, PG-HSOF-8 package.

Drain to Source Voltage (Vdss) is 150 V

Continuous drain current is (Id) @ 25°C is 21 A (Ta), 190 A (Tc)

Drive Voltages (Max Rds On, Min Rds On) are 8V & 10V

Operating temperature is from -55°C to 175°C (TJ)

Related links