Infineon IPT Type N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

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Subtotal (1 unit)*

PHP362.14

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PHP405.60

(inc. VAT)

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1 - 9PHP362.14
10 - 99PHP354.72
100 - 249PHP347.93
250 - 499PHP340.53
500 +PHP333.74

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Packaging Options:
RS Stock No.:
236-1587
Mfr. Part No.:
IPT013N08NM5LFATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

333A

Maximum Drain Source Voltage Vds

80V

Package Type

HSOF-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.3mΩ

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

158nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.1mm

Width

10.58 mm

Standards/Approvals

No

Height

2.4mm

Automotive Standard

No

The Infineon OptiMOS 5 Linear FET, 80 V MOSFET . This product is fully qualified according to JEDEC for industrial applications .

Ideal for hot-swap and e-fuse applications

Very low on-resistance RDS(on)

Wide safe operating area SOA

N-channel, normal level

100% avalanche tested

Pb-free plating, halogen-free

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