Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN ISZ0804NLSATMA1
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP468.44
(exc. VAT)
PHP524.655
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 4,915 unit(s) shipping from December 29, 2025
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP93.688 | PHP468.44 |
| 10 - 95 | PHP88.972 | PHP444.86 |
| 100 - 245 | PHP84.536 | PHP422.68 |
| 250 - 495 | PHP80.388 | PHP401.94 |
| 500 + | PHP76.382 | PHP381.91 |
*price indicative
- RS Stock No.:
- 232-6778
- Mfr. Part No.:
- ISZ0804NLSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15.5mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.4mm | |
| Width | 1.1 mm | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15.5mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Height 3.4mm | ||
Width 1.1 mm | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
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