Infineon OptiMOS 5 Type N-Channel MOSFET, 58 A, 100 V, 8-Pin PQFN

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Subtotal (1 reel of 5000 units)*

PHP258,595.00

(exc. VAT)

PHP289,625.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 - 5000PHP51.719PHP258,595.00
10000 - 10000PHP49.133PHP245,665.00
15000 +PHP46.676PHP233,380.00

*price indicative

RS Stock No.:
232-6777
Mfr. Part No.:
ISZ0804NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 5

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15.5mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

60W

Typical Gate Charge Qg @ Vgs

24nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Width

1.1 mm

Height

3.4mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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