Infineon OptiMOS 5 Type N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN ISZ0703NLSATMA1

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Subtotal (1 pack of 5 units)*

PHP365.04

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PHP408.845

(inc. VAT)

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  • 4,980 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP73.008PHP365.04
10 - 95PHP69.402PHP347.01
100 - 245PHP65.944PHP329.72
250 - 495PHP62.64PHP313.20
500 +PHP59.486PHP297.43

*price indicative

Packaging Options:
RS Stock No.:
232-6774
Mfr. Part No.:
ISZ0703NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

60V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.2mΩ

Maximum Power Dissipation Pd

44W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

3.4mm

Standards/Approvals

No

Length

3.4mm

Width

1.1 mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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