Infineon OptiMOS 5 Type N-Channel MOSFET, 86 A, 60 V, 8-Pin PQFN ISZ0702NLSATMA1

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Subtotal (1 pack of 5 units)*

PHP420.52

(exc. VAT)

PHP470.98

(inc. VAT)

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  • 4,990 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP84.104PHP420.52
10 - 95PHP79.936PHP399.68
100 - 245PHP75.916PHP379.58
250 - 495PHP72.044PHP360.22
500 +PHP68.47PHP342.35

*price indicative

Packaging Options:
RS Stock No.:
232-6772
Mfr. Part No.:
ISZ0702NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

60V

Package Type

PQFN

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.6mΩ

Maximum Power Dissipation Pd

65W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

39nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

1.1 mm

Standards/Approvals

No

Length

3.4mm

Height

3.4mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 60 V, are designed targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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