STMicroelectronics SCTW Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 4-Pin Hip-247
- RS Stock No.:
- 230-0093
- Mfr. Part No.:
- SCTWA60N120G2-4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP60,147.33
(exc. VAT)
PHP67,365.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from September 14, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | PHP2,004.911 | PHP60,147.33 |
| 90 - 120 | PHP1,953.479 | PHP58,604.37 |
| 150 + | PHP1,928.762 | PHP57,862.86 |
*price indicative
- RS Stock No.:
- 230-0093
- Mfr. Part No.:
- SCTWA60N120G2-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTW | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 388W | |
| Forward Voltage Vf | 3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.1 mm | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTW | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 388W | ||
Forward Voltage Vf 3V | ||
Maximum Operating Temperature 175°C | ||
Width 5.1 mm | ||
Length 15.9mm | ||
Height 21.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Related links
- STMicroelectronics SCTW Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4
- STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTWA40N12G24AG Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCT 1 Type N-Channel MOSFET Enhancement, 4-Pin Hip-247-4 SCT070W120G3-4
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4