STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4
- RS Stock No.:
- 719-470
- Mfr. Part No.:
- SCT025W120G3-4
- Manufacturer:
- STMicroelectronics
N
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Units | Per Unit |
|---|---|
| 1 - 4 | PHP1,143.07 |
| 5 + | PHP1,109.15 |
*price indicative
- RS Stock No.:
- 719-470
- Mfr. Part No.:
- SCT025W120G3-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247-4 | |
| Series | Sct | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Forward Voltage Vf | 2.7V | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Height | 25.27mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247-4 | ||
Series Sct | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Forward Voltage Vf 2.7V | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Height 25.27mm | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability (TJ equal to 200 °C)
Source sensing pin for increased efficiency