STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247 SCT025W120G3AG

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Subtotal (1 tube of 30 units)*

PHP52,102.38

(exc. VAT)

PHP58,354.68

(inc. VAT)

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30 +PHP1,736.746PHP52,102.38

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RS Stock No.:
215-071
Mfr. Part No.:
SCT025W120G3AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

388W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

200°C

Width

15.6 mm

Standards/Approvals

RoHS

Length

34.8mm

Height

5mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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