STMicroelectronics SCT Type N-Channel MOSFET, 33 A, 1200 V Depletion, 3-Pin Hip-247 SCTW40N120G2VAG
- RS Stock No.:
- 202-5490
- Mfr. Part No.:
- SCTW40N120G2VAG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP1,319.66
(exc. VAT)
PHP1,478.02
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 4 | PHP1,319.66 |
| 5 - 9 | PHP1,293.28 |
| 10 + | PHP1,213.08 |
*price indicative
- RS Stock No.:
- 202-5490
- Mfr. Part No.:
- SCTW40N120G2VAG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 3.4V | |
| Maximum Operating Temperature | 200°C | |
| Width | 5.15 mm | |
| Height | 34.95mm | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 3.4V | ||
Maximum Operating Temperature 200°C | ||
Width 5.15 mm | ||
Height 34.95mm | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Related links
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247 SCT50N120
- STMicroelectronics SCT Type N-Channel SiC Power Module 1200 V Depletion, 3-Pin Hip-247 SCT10N120AG
- STMicroelectronics SCT Type N-Channel SiC Power Module 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Depletion, 3-Pin Hip-247 SCTW35N65G2VAG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Depletion, 3-Pin Hip-247