STMicroelectronics SCT Type N-Channel SiC Power Module, 12 A, 1200 V Depletion, 3-Pin Hip-247

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Subtotal (1 tube of 30 units)*

PHP18,134.74

(exc. VAT)

PHP20,310.91

(inc. VAT)

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Last RS stock
  • Final 19 unit(s), ready to ship from another location
Tube(s)
Per Tube
Per Unit*
1 - 3PHP18,134.74PHP604.491
4 - 8PHP17,772.05PHP592.402
9 - 16PHP17,416.61PHP580.554
17 - 33PHP17,068.28PHP568.943
34 +PHP16,726.90PHP557.563

*price indicative

RS Stock No.:
202-4776
Mfr. Part No.:
SCT10N120AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

SiC Power Module

Channel Type

Type N

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.52Ω

Channel Mode

Depletion

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

4.3V

Maximum Operating Temperature

200°C

Length

15.75mm

Standards/Approvals

No

Height

34.95mm

Width

5.15 mm

Automotive Standard

AEC-Q101

The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.

Very fast and robust intrinsic body diode

Low capacitance

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