STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4

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PHP1,815.22

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Packaging Options:
RS Stock No.:
214-958
Mfr. Part No.:
SCT040W120G3-4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247-4

Series

SCT

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

312W

Typical Gate Charge Qg @ Vgs

56nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1200V

Maximum Gate Source Voltage Vgs

-10 to 22 V

Maximum Operating Temperature

200°C

Standards/Approvals

RoHS, ECOPACK2

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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