onsemi UniFET II N-Channel MOSFET, 2 A, 500 V N, 3-Pin SOT-223 FDT4N50NZU
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Manufacturer:
- onsemi
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP767.60
(exc. VAT)
PHP859.70
(inc. VAT)
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In Stock
- Plus 2,680 unit(s) shipping from October 27, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP76.76 | PHP767.60 |
| 20 - 90 | PHP74.457 | PHP744.57 |
| 100 - 240 | PHP72.154 | PHP721.54 |
| 250 - 490 | PHP70.621 | PHP706.21 |
| 500 + | PHP69.086 | PHP690.86 |
*price indicative
- RS Stock No.:
- 229-6327
- Mfr. Part No.:
- FDT4N50NZU
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | SOT-223 | |
| Series | UniFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 9.1nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.7mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type SOT-223 | ||
Series UniFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 9.1nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.7mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
The ON Semiconductor UniFET II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET has the smallest on state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction, flat panel display, TV power, ATX and electronic lamp ballasts.
Ultra low gate charge
100% avalanche tested
Pb−free
Halogen free
RoHS compliant
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