N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 onsemi FDV303N
- RS Stock No.:
- 121-2747
- Mfr. Part No.:
- FDV303N
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 100 units)**
PHP490.00
(exc. VAT)
PHP549.00
(inc. VAT)
5100 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for over PHP7,000.00 (ex VAT)
Units | Per Unit | Per Pack** |
|---|---|---|
| 100 - 400 | PHP4.90 | PHP490.00 |
| 500 - 900 | PHP4.753 | PHP475.30 |
| 1000 - 1900 | PHP4.61 | PHP461.00 |
| 2000 - 2900 | PHP4.472 | PHP447.20 |
| 3000 + | PHP4.338 | PHP433.80 |
**price indicative
- RS Stock No.:
- 121-2747
- Mfr. Part No.:
- FDV303N
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 680 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 450 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +8 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Length | 2.92mm | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.64 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.93mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 680 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +8 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Length 2.92mm | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.64 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.93mm | ||
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