onsemi UniFET Type N-Channel MOSFET, 23 A, 400 V Enhancement, 3-Pin TO-3PN FDA24N40F

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Subtotal (1 pack of 5 units)*

PHP1,172.08

(exc. VAT)

PHP1,312.73

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP234.416PHP1,172.08
25 - 95PHP227.386PHP1,136.93
100 - 245PHP220.564PHP1,102.82
250 - 495PHP213.948PHP1,069.74
500 +PHP207.534PHP1,037.67

*price indicative

Packaging Options:
RS Stock No.:
903-4134
Mfr. Part No.:
FDA24N40F
Manufacturer:
onsemi
Find similar products by selecting one or more attributes.
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

400V

Series

UniFET

Package Type

TO-3PN

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

190mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

235W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46nC

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

16.2mm

Width

5 mm

Height

20.1mm

Automotive Standard

No

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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