Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin SOT-223 IPN95R2K0P7ATMA1
- RS Stock No.:
- 215-2534
- Mfr. Part No.:
- IPN95R2K0P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP987.84
(exc. VAT)
PHP1,106.38
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 300 unit(s) ready to ship from another location
- Plus 6,720 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP49.392 | PHP987.84 |
| 40 - 80 | PHP45.265 | PHP905.30 |
| 100 - 220 | PHP41.804 | PHP836.08 |
| 240 - 480 | PHP38.809 | PHP776.18 |
| 500 + | PHP37.744 | PHP754.88 |
*price indicative
- RS Stock No.:
- 215-2534
- Mfr. Part No.:
- IPN95R2K0P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 7W | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 7W | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 950V Cool MOS™ P7 series designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V Cool MOS™ C3, the 950V Cool MOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS™ P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.
Best-in-class FOMRDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class SOT-223 RDS(on)
Best-in-class Cool MOS™ quality and reliability
Fully optimized portfolio
Related links
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