Vishay E Type N-Channel Power MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 228-2839
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 tube of 50 units)*
PHP2,744.00
(exc. VAT)
PHP3,073.50
(inc. VAT)
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In Stock
- Plus 850 unit(s) shipping from June 29, 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP54.88 | PHP2,744.00 |
| 100 - 450 | PHP49.392 | PHP2,469.60 |
| 500 - 950 | PHP44.453 | PHP2,222.65 |
| 1000 - 1950 | PHP40.008 | PHP2,000.40 |
| 2000 + | PHP36.007 | PHP1,800.35 |
*price indicative
- RS Stock No.:
- 228-2839
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain‑Source Voltage, 3A Maximum Continuous Drain Current - SiHA5N80AE-GE3
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-management roles in industrial electronic systems. Supplied in a TO-220 through-hole package with three connections, it suits applications requiring discrete mounting and thermal management. The component operates across a wide temperature range and is constructed to meet RoHS standards.
Features and Benefits:
• 850V maximum drain voltage enables high-voltage switching
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
• 3A continuous drain current supports moderate load currents
• 1.35Ω drain-source resistance reduces conduction losses
• 29W power dissipation allows sustained thermal loading
• 11nC typical gate charge improves switching efficiency
• ±30V gate-source tolerance protects gate-drive flexibility
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
• Ideal for industrial motor-drive front-ends with discrete components
• Used for lighting ballast control in high-voltage systems
• Can be used for inverter-stage switching in power conversion
What temperature range can it withstand during operation?
It is rated to operate down to -55°C and up to 150°C, permitting use in environments with wide thermal variation.
How does the package choice affect thermal management?
The TO-220 package offers a metal tab suitable for heatsinking, allowing improved heat extraction when mounted to an external cooler.
What gate-drive considerations are necessary for this device?
The gate should be driven within ±30V limits and sized to accommodate an 11nC typical gate charge to ensure reliable switching performance.
Is the device compliant with environmental substance restrictions?
It conforms to RoHS requirements, indicating restriction of certain hazardous substances in its construction.
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