Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-220

This image is representative of the product range

Bulk discount available

Subtotal (1 tube of 50 units)*

PHP3,312.40

(exc. VAT)

PHP3,709.90

(inc. VAT)

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Last RS stock
  • Final 850 unit(s), ready to ship from another location
Units
Per Unit
Per Tube*
50 - 50PHP66.248PHP3,312.40
100 - 200PHP64.261PHP3,213.05
250 - 450PHP60.405PHP3,020.25
500 - 950PHP54.968PHP2,748.40
1000 +PHP48.372PHP2,418.60

*price indicative

RS Stock No.:
228-2880
Mfr. Part No.:
SiHP6N80AE-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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