Vishay E Type N-Channel Power MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- RS Stock No.:
- 228-2836
- Mfr. Part No.:
- SIHA24N80AE-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 tube of 50 units)*
PHP7,465.65
(exc. VAT)
PHP8,361.55
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 650 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP149.313 | PHP7,465.65 |
| 100 - 450 | PHP144.833 | PHP7,241.65 |
| 500 - 950 | PHP139.04 | PHP6,952.00 |
| 1000 + | PHP132.088 | PHP6,604.40 |
*price indicative
- RS Stock No.:
- 228-2836
- Mfr. Part No.:
- SIHA24N80AE-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 184mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 35W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 184mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 35W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 850V Drain-Source Voltage, 9A Continuous Drain Current - SIHA24N80AE-GE3
Features and Benefits:
• 9A continuous drain current for sustained power handling
• 184mΩ Rds(on) reduces conduction losses at operating currents
• 35W maximum dissipation allows significant power throughput
• 59nC typical gate charge enables predictable switching dynamics
• 30V gate rating supports common gate-drive voltages
Applications
• Used for industrial motor-drive switching stages
• Ideal for mid-power inverter and converter designs
• Can be used for DC-DC conversion in telecom equipment
• Suitable for laboratory and prototyping through-hole builds
What temperature extremes can it withstand in operation?
How does the forward voltage affect switching circuits?
Is the device suitable for automotive electronic systems?
What mounting and connection considerations apply for thermal management?
Related links
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SIHA24N80AE-GE3
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220
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