Vishay N-Channel 100 V Type N-Channel MOSFET, 110 A, 100 V, 8-Pin SO-8 SIR5102DP-T1-RE3

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Subtotal (1 pack of 5 units)*

PHP960.40

(exc. VAT)

PHP1,075.65

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP192.08PHP960.40
50 - 95PHP172.87PHP864.35
100 - 245PHP157.174PHP785.87
250 - 995PHP154.128PHP770.64
1000 +PHP151.082PHP755.41

*price indicative

Packaging Options:
RS Stock No.:
225-9926
Mfr. Part No.:
SIR5102DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

N-Channel 100 V

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.6mΩ

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

6.25W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

1.12 mm

Height

5.26mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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